ROHM Semiconductor USA, LLC 1.5V Drive Pch MOSFET RW1C025ZP

Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Request a Quote Datasheet
Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
1.5V Drive Pch MOSFET - RW1C025ZP - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
1.5V Drive Pch MOSFET
RW1C025ZP
1.5V Drive Pch MOSFET RW1C025ZP
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RW1C025ZP - 303348-RW1C025ZP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RW1C025ZP
303348-RW1C025ZP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RW1C025ZP 303348-RW1C025ZP
Manufacturer: Rohm Semiconductor Win Source Part Number: 303348-RW1C025ZP Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-WEMT Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 21nC @ 4.5V Max Input Capacitance: 1300pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 65 mOhm @ 2.5A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 303348-RW1C025ZP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-WEMT
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 21nC @ 4.5V
Max Input Capacitance: 1300pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 65 mOhm @ 2.5A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
20V 2.5A MOSFET Transistor
285-RW1C025ZP
20V 2.5A MOSFET Transistor 285-RW1C025ZP
MOSFET P-CH 20V 2.5A WEMT6 Product overview: RW1C025ZP from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RW1C025ZP can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 2.5A WEMT6 Product overview: RW1C025ZP from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RW1C025ZP can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number RW1C025ZP 303348-RW1C025ZP 285-RW1C025ZP
Product Name 1.5V Drive Pch MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - RW1C025ZP 20V 2.5A MOSFET Transistor
Polarity P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS -20 volts 20 volts
IDSS -2500 milliamps
PD 700 milliwatts 700 milliwatts 700 milliwatts
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