ROHM Semiconductor GmbH 2.5V Drive Nch MOSFET (AEC-Q101 Qualified) RTL035N03FRA

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet
Datasheet Summary
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RTL035N03FRA is an N-channel 30V MOSFET designed for switching applications, housed in the TUMT6 surface-mount package. It has a maximum continuous drain current of ±3.5A and a maximum on-resistance of 56mΩ at 4.5V gate drive. The device is rated for 1.0W power dissipation, operates across a junction temperature range of -55℃ to +150℃, and meets AEC-Q101 qualifications. It is RoHS compliant with Pb-free lead plating.

Datasheet Summary
Powered by GS/AI

RTL035N03FRA is an N-channel 30V MOSFET designed for switching applications, housed in the TUMT6 surface-mount package. It has a maximum continuous drain current of ±3.5A and a maximum on-resistance of 56mΩ at 4.5V gate drive. The device is rated for 1.0W power dissipation, operates across a junction temperature range of -55℃ to +150℃, and meets AEC-Q101 qualifications. It is RoHS compliant with Pb-free lead plating.

Suppliers

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Supplier Links
2.5V Drive Nch MOSFET (AEC-Q101 Qualified) - RTL035N03FRA - ROHM Semiconductor GmbH
Willich, Germany
2.5V Drive Nch MOSFET (AEC-Q101 Qualified)
RTL035N03FRA
2.5V Drive Nch MOSFET (AEC-Q101 Qualified) RTL035N03FRA
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet
2.5V Drive Nch MOSFET (Corresponds to AEC-Q101) - RTL035N03FRA - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
2.5V Drive Nch MOSFET (Corresponds to AEC-Q101)
RTL035N03FRA
2.5V Drive Nch MOSFET (Corresponds to AEC-Q101) RTL035N03FRA
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number RTL035N03FRA RTL035N03FRA
Product Name 2.5V Drive Nch MOSFET (AEC-Q101 Qualified) 2.5V Drive Nch MOSFET (Corresponds to AEC-Q101)
Polarity N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
IDSS 3500 milliamps 3500 milliamps
PD 1000 milliwatts 1000 milliwatts
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