ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUM002N05T2L RUM002N05T2L

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 027651-RUM002N05T2L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VMT3 Dimension: SOT-723 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Input Capacitance: 25pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUM002N05T2L - 027651-RUM002N05T2L - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - RUM002N05T2L - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - RUM002N05T2LTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - RUM002N05T2LDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - RUM002N05T2LCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RUM002N05T2L - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 50V, 0.2A, Vmt; Transistor Polarity Rohm - 10AC8983 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 027651-RUM002N05T2L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VMT3 Dimension: SOT-723 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Input Capacitance: 25pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUM002N05T2L - 027651-RUM002N05T2L - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUM002N05T2L
027651-RUM002N05T2L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUM002N05T2L 027651-RUM002N05T2L
Manufacturer: Rohm Semiconductor Win Source Part Number: 027651-RUM002N05T2L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VMT3 Dimension: SOT-723 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Input Capacitance: 25pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 027651-RUM002N05T2L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VMT3
Dimension: SOT-723
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Input Capacitance: 25pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - RUM002N05T2L - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
RUM002N05T2L
Single FETs, MOSFETs RUM002N05T2L
MOSFET N-CH 50V 200MA VMT3

MOSFET N-CH 50V 200MA VMT3

Supplier's Site Datasheet
Single FETs, MOSFETs - RUM002N05T2LTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RUM002N05T2LTR-ND
Single FETs, MOSFETs RUM002N05T2LTR-ND
N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3

N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3

Buy Now Datasheet
Single FETs, MOSFETs - RUM002N05T2LDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RUM002N05T2LDKR-ND
Single FETs, MOSFETs RUM002N05T2LDKR-ND
N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3

N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3

Buy Now Datasheet
Single FETs, MOSFETs - RUM002N05T2LCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RUM002N05T2LCT-ND
Single FETs, MOSFETs RUM002N05T2LCT-ND
N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3

N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RUM002N05T2L - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RUM002N05T2L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RUM002N05T2L
MOSFET N-CH 50V 200MA VMT3

MOSFET N-CH 50V 200MA VMT3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
RUM002N05T2L
MOSFET RUM002N05T2L
MOSFET TRANS MOSFET NCH 50V 0.2A 3PIN

MOSFET TRANS MOSFET NCH 50V 0.2A 3PIN

Buy Now Datasheet
Mosfet, N-Ch, 50V, 0.2A, Vmt; Transistor Polarity Rohm - 10AC8983 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 50V, 0.2A, Vmt; Transistor Polarity Rohm
10AC8983
Mosfet, N-Ch, 50V, 0.2A, Vmt; Transistor Polarity Rohm 10AC8983
MOSFET, N-CH, 50V, 0.2A, VMT; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 50V, 0.2A, VMT; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 027651-RUM002N05T2L RUM002N05T2L RUM002N05T2LTR-ND RUM002N05T2L RUM002N05T2L 10AC8983
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUM002N05T2L Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 50V, 0.2A, Vmt; Transistor Polarity Rohm
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 50 volts 50 volts
PD 150 milliwatts 150 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type SOT3; VMT3 SOT-723 SOT-723 TO-3
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