MOSFET N-CH 50V 200MA VMT3
Manufacturer: Rohm Semiconductor
Win Source Part Number: 027651-RUM002N05T2L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VMT3
Dimension: SOT-723
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Input Capacitance: 25pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3
N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3
N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount VMT3
MOSFET N-CH 50V 200MA VMT3 Product overview: RUM002N05T2L from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 200MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RUM002N05T2L can be used for catalog matching and distributor lookup.
MOSFET N-CH 50V 200MA VMT3
MOSFET, N-CH, 50V, 0.2A, VMT; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
MOSFET TRANS MOSFET NCH 50V 0.2A 3PIN
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RUM002N05T2L | 027651-RUM002N05T2L | RUM002N05T2LTR-ND | 278-RUM002N05T2L | RUM002N05T2L | 10AC8983 | RUM002N05T2L |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUM002N05T2L | Single FETs, MOSFETs | 50V 200MA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 50V, 0.2A, Vmt; Transistor Polarity Rohm | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 50 volts | 50 volts | |||||
| IDSS | 200 milliamps | 200 milliamps | |||||
| PD | 150 milliwatts | 150 milliwatts | 150 milliwatts |
