ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RW1A013ZPT2R RW1A013ZPT2R

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1093108-RW1A013ZPT2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 400mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-WEMT Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 2.4nC @ 4.5V Max Input Capacitance: 290pF @ 6V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 260 mOhm @ 1.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1093108-RW1A013ZPT2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 400mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-WEMT Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 2.4nC @ 4.5V Max Input Capacitance: 290pF @ 6V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 260 mOhm @ 1.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RW1A013ZPT2R - 1093108-RW1A013ZPT2R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RW1A013ZPT2R
1093108-RW1A013ZPT2R
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RW1A013ZPT2R 1093108-RW1A013ZPT2R
Manufacturer: Rohm Semiconductor Win Source Part Number: 1093108-RW1A013ZPT2R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 400mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-WEMT Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 2.4nC @ 4.5V Max Input Capacitance: 290pF @ 6V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 260 mOhm @ 1.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1093108-RW1A013ZPT2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 400mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-WEMT
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 2.4nC @ 4.5V
Max Input Capacitance: 290pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 260 mOhm @ 1.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - RW1A013ZPT2RTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RW1A013ZPT2RTR-ND
Single FETs, MOSFETs RW1A013ZPT2RTR-ND
P-Channel 12V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT

P-Channel 12V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RW1A013ZPT2R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RW1A013ZPT2R
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RW1A013ZPT2R
MOSFET P-CH 12V 1.5A 6WEMT

MOSFET P-CH 12V 1.5A 6WEMT

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET P-CH 1.5V 1.3A 6 Pin.

MOSFET MOSFET P-CH 1.5V 1.3A 6 Pin.

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1093108-RW1A013ZPT2R RW1A013ZPT2RTR-ND RW1A013ZPT2R RW1A013ZPT2R
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RW1A013ZPT2R Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 12 volts
PD 400 milliwatts
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