The RSS100N03FRATB is a 30V N-channel power MOSFET designed for automotive applications, compliant with AEC-Q101 standards. It features a maximum continuous drain current of ¬±10A and a low on-resistance of 13.3mOc at 10A and 10V gate-source voltage. The device has a maximum power dissipation of 2.0W and operates within a junction temperature range of -55¬8C to +150¬8C. It is packaged in an 8-SOIC format and is suitable for surface mount technology. The MOSFET has a gate threshold voltage of 2.5V and a total gate charge of 20nC at 5V. It is RoHS compliant and comes in tape and reel packaging, with a standard quantity of 2,500 units per reel. This product is suitable for applications requiring efficient switching and low power loss.
MOSFET N-CH 30V 10A 8SOP Product overview: RSS100N03FRATB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RSS100N03FRATB can be used for catalog matching and distributor lookup.
N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-SOP
N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-SOP
N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-SOP
Win Source Part Number: 961020-RSS100N03FRAT
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: RSS100N03FRATBCT,RSS
Base Product Number: RSS100
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
(PRICE/TC) MOSFET, AEC-Q101, N-CH, 30V, SOP, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:10A, DRAIN SOURCE VOLTAGE VDS:30V, ON RESISTANCE RDS(ON):0.0095OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:2.5V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, AEC-Q101, N-CH, 30V, SOP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET Nch 30V Vds 10A 0.0135Rds(on) 14Qg
MOSFET N-CH 30V 10A 8SOP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Radwell International | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-RSS100N03FRATB | RSS100N03FRATBCT-ND | 961020-RSS100N03FRATB | 94160741 | 58AC3764 | RSS100N03FRATB | RSS100N03FRATB |
| Product Name | 30V 10A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Transistor | Mosfet, Aec-Q101, N-Ch, 30V, Sop; Transistor Polarity Rohm | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0060 kS | ||||||
| PD | 2 milliwatts | 2000 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) |
