ROHM Semiconductor USA, LLC 0.9V Drive Nch MOSFET RYU002N05

Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Datasheet
Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Datasheet

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0.9V Drive Nch MOSFET - RYU002N05 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
0.9V Drive Nch MOSFET
RYU002N05
0.9V Drive Nch MOSFET RYU002N05
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RYU002N05
Product Name 0.9V Drive Nch MOSFET
Polarity N-Channel
V(BR)DSS 50 volts
IDSS 200 milliamps
PD 200 milliwatts
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