ROHM Semiconductor GmbH 1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive SCT3040KLHR

The SCT3040KLHR is an automotive-grade N-channel silicon carbide (SiC) MOSFET in a TO-247N package, rated for 1200 V drain-source voltage and 55 A continuous drain current at 25°C. It features a typcial on-resistance of 40 mΩ at 25°C, AEC-Q101 qualification, RoHS compliance, and a maximum junction temperature of 175°C. The device has a thermal resistance from junction to case of 0.44 to 0.57 K/W and supports fast switching with low gate charge and body diode reverse recovery characteristics.