N-Channel 1700V 5.9A (Tc) 57W (Tc) Surface Mount TO-268
N-Channel 1700V 5.9A (Tc) 57W (Tc) Surface Mount TO-268
Manufacturer: Rohm Semiconductor
Win Source Part Number: 933185-SCT2750NYTB
Operating Temperature Range: 175°C (TJ)
Features: N-Channel 1700 V 5.9A (Tc) 57W (Tc) Surface Mount TO-268
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Package: Reel - TR
Mounting: Surface Mount
Family Name: SCT2750
Categories: Discrete Semiconductor Products
Case / Package: TO-268
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 400
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 14 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SCT2750NYTBDKR, SCT2750NYTBTR, SCT2750NYTBCT
SICFET N-CH 1700V 5.9A TO268 Product overview: SCT2750NYTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 5.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 5.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT2750NYTB can be used for catalog matching and distributor lookup.
SICFET N-CH 1700V 5.9A TO268
MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
MOSFET, N-CH, 1.7KV, 6A, TO-268; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):0.75ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCT2750NYTBTR-ND | 933185-SCT2750NYTB | 278-SCT2750NYTB | SCT2750NYTB | SCT2750NYTB | 28AC1982 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2750NYTB | 1700V 5.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 1.7Kv, 6A, To-268; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | Silicon Carbide | |||||
| Package Type | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | SOT3; TO-268 | Tape & Reel (TR) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | TO-3 | |
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 6.00E-4 kS |
