N-Channel 1200V 14A (Tc) 108W (Tc) Through Hole TO-247
SICFET N-CH 1200V 14A TO247
Manufacturer: Rohm Semiconductor
Win Source Part Number: 813653-SCT2280KEC
Packaging: Tube
Mounting Style: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200V
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 18V
Temperature Range - Operating: 175°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 108W (Tc)
Popularity: Low
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 360
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 364mOhm at 4A, 18V
Gate Charge (Qg) (Maximum) at Vgs: 36nC at 18V
Input Capacitance (Ciss) (Maximum) at Vds: 667pF at 800V
Current - Continuous Drain (Id) at 25°C: 14A (Tc)
Vgs(th) (Maximum) at Id: 4V at 1.4mA
Maximum Vgs: +22V, -6V
SICFET N-CH 1200V 14A TO247 Product overview: SCT2280KEC from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT2280KEC can be used for catalog matching and distributor lookup.
MOSFET, N CHANNEL, 1.2KV, 14A, 0R28, TO-247-3; MOSFET Module Configuration:Single
SICFET N-CH 1200V 14A TO247
MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCT2280KEC-ND | SCT2280KEC | 813653-SCT2280KEC | 278-SCT2280KEC | 06X0712 | SCT2280KEC | SCT2280KEC |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - SCT2280KEC | 1200V 14A MOSFET Transistor | Mosfet, N Channel, 1.2Kv, 14A, 0R28, To-247-3; Mosfet Module Configuration Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | |||||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3 | Tube | TO-3; TO-247 | TO-247; TO-247-3 | |
| V(BR)DSS | 1200 volts | ||||||
| IDSS | 14000 milliamps | 14000 milliamps |
