ROHM Semiconductor USA, LLC 2.5V Drive Nch MOSFET RTR025N03

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
2.5V Drive Nch MOSFET - RTR025N03 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
2.5V Drive Nch MOSFET
RTR025N03
2.5V Drive Nch MOSFET RTR025N03
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RTR025N03
Product Name 2.5V Drive Nch MOSFET
Polarity N-Channel
V(BR)DSS 30 volts
IDSS 2500 milliamps
PD 1000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1658843 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
Package Type Sot-523 (sc-89)
View Details
CSD16407Q5C DualCool? N-Channel NexFET? Power MOSFET - CSD16407Q5C - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 25 volts
rDS(on) 0.0033 ohms
View Details
6 suppliers
Mosfet,nn Channel,60V,0.34A,sot666; Transistor Polarity Nexperia - 28T0306 - Newark, An Avnet Company
Specs
Polarity N-Channel
IDSS 340 milliamps
rDS(on) 1 ohms
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMCQ120R080M1T - AIMCQ120R080M1T - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details