650V, 118A, THD, TRENCH-STRUCTUR
N-Channel 650V 118A (Tc) 427W Through Hole TO-247N
MOSFET, N-CH, 650V, 118A, 175DEG C, 427W; Transistor Polarity:N Channel; Continuous Drain Current Id:118A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; PowerRoHS Compliant: Yes
650V, 118A, THD, TRENCH-STRUCTUR
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SCT3017ALGC11 | 846-SCT3017ALGC11-ND | 81AC5489 | SCT3017ALGC11 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 118A, 175Deg C, 427W; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||
| V(BR)DSS | 650 volts | |||
| IDSS | 118000 milliamps | 118000 milliamps | ||
| PD | 427000 milliwatts |
