MOSFET N-CH 20V 1A DFN1006-3
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1093102-RV2C010UNT2L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VML1006
Dimension: SC-101, SOT-883
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Input Capacitance: 40pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 470 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
N-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount VML1006
N-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount VML1006
N-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount VML1006
20V 1A 340mΩ@4.5V,500mA 400mW 1V@1mA N Channel X2-DFN1006-3 MOSFETs ROHS
MOSFET N-CH 20V 1A DFN1006-3
MOSFET Transistor, N Channel, 1 A, 20 V, 0.34 ohm, 4.5 V, 1 V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RV2C010UNT2L | 1093102-RV2C010UNT2L | RV2C010UNT2LTR-ND | RV2C010UNT2L | RV2C010UNT2L | RV2C010UNT2L | 71Y9260 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RV2C010UNT2L | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 1 A, 20 V, 0.34 Ohm, 4.5 V, 1 V Rohs Compliant Rohm |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| IDSS | 1000 milliamps | ||||||
| PD | 400 milliwatts | 400 milliwatts | 400 milliwatts |