ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC SCT2450KEC

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1030763-SCT2450KEC Packaging: Tube/Rail Mounting: Through Hole Technology: SiCFET (Silicon Carbide) Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 900μA Max Gate Charge: 27nC @ 18V Max Input Capacitance: 463pF @ 800V Maximum Gate-Source Voltage: +22V, -6V Maximum Rds On at Id,Vgs: 585 mOhm @ 3A, 18V Alternative Parts (Cross-Reference): APT28M120L; SCT2450KE; SCT10N120; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1030763-SCT2450KEC Packaging: Tube/Rail Mounting: Through Hole Technology: SiCFET (Silicon Carbide) Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 900μA Max Gate Charge: 27nC @ 18V Max Input Capacitance: 463pF @ 800V Maximum Gate-Source Voltage: +22V, -6V Maximum Rds On at Id,Vgs: 585 mOhm @ 3A, 18V Alternative Parts (Cross-Reference): APT28M120L; SCT2450KE; SCT10N120; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC - 1030763-SCT2450KEC - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC
1030763-SCT2450KEC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC 1030763-SCT2450KEC
Manufacturer: Rohm Semiconductor Win Source Part Number: 1030763-SCT2450KEC Packaging: Tube/Rail Mounting: Through Hole Technology: SiCFET (Silicon Carbide) Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 900μA Max Gate Charge: 27nC @ 18V Max Input Capacitance: 463pF @ 800V Maximum Gate-Source Voltage: +22V, -6V Maximum Rds On at Id,Vgs: 585 mOhm @ 3A, 18V Alternative Parts (Cross-Reference): APT28M120L; SCT2450KE; SCT10N120; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1030763-SCT2450KEC
Packaging: Tube/Rail
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 18V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 900μA
Max Gate Charge: 27nC @ 18V
Max Input Capacitance: 463pF @ 800V
Maximum Gate-Source Voltage: +22V, -6V
Maximum Rds On at Id,Vgs: 585 mOhm @ 3A, 18V
Alternative Parts (Cross-Reference): APT28M120L; SCT2450KE; SCT10N120;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SCT2450KEC-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SCT2450KEC-ND
Single FETs, MOSFETs SCT2450KEC-ND
N-Channel 1200V 10A (Tc) 85W (Tc) Through Hole TO-247

N-Channel 1200V 10A (Tc) 85W (Tc) Through Hole TO-247

Buy Now Datasheet
Mosfet, N Channel, 1.2Kv, 10A, 0R45, To-247-3; Mosfet Configuration Rohm - 06X0713 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 1.2Kv, 10A, 0R45, To-247-3; Mosfet Configuration Rohm
06X0713
Mosfet, N Channel, 1.2Kv, 10A, 0R45, To-247-3; Mosfet Configuration Rohm 06X0713
MOSFET, N CHANNEL, 1.2KV, 10A, 0R45, TO-247-3; MOSFET Configuration:Single ; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.45ohm; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N CHANNEL, 1.2KV, 10A, 0R45, TO-247-3; MOSFET Configuration:Single; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.45ohm; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC

MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT2450KEC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCT2450KEC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCT2450KEC
SICFET N-CH 1200V 10A TO247

SICFET N-CH 1200V 10A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1030763-SCT2450KEC SCT2450KEC-ND 06X0713 SCT2450KEC SCT2450KEC
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC Single FETs, MOSFETs Mosfet, N Channel, 1.2Kv, 10A, 0R45, To-247-3; Mosfet Configuration Rohm MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 1200 volts
PD 85000 milliwatts
TJ 175 C (347 F)
Package Type TO-247; SOT3; TO-247 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
Unlock Full Specs
to access all available technical data