ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC SCT2450KEC

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1030763-SCT2450KEC Packaging: Tube/Rail Mounting: Through Hole Technology: SiCFET (Silicon Carbide) Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 900μA Max Gate Charge: 27nC @ 18V Max Input Capacitance: 463pF @ 800V Maximum Gate-Source Voltage: +22V, -6V Maximum Rds On at Id,Vgs: 585 mOhm @ 3A, 18V Alternative Parts (Cross-Reference): APT28M120L; SCT2450KE; SCT10N120; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC - 1030763-SCT2450KEC - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SCT2450KEC-ND - DigiKey
    DigiKey
  • Mosfet, N Channel, 1.2Kv, 10A, 0R45, To-247-3; Mosfet Configuration Rohm - 06X0713 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT2450KEC - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1030763-SCT2450KEC Packaging: Tube/Rail Mounting: Through Hole Technology: SiCFET (Silicon Carbide) Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 900μA Max Gate Charge: 27nC @ 18V Max Input Capacitance: 463pF @ 800V Maximum Gate-Source Voltage: +22V, -6V Maximum Rds On at Id,Vgs: 585 mOhm @ 3A, 18V Alternative Parts (Cross-Reference): APT28M120L; SCT2450KE; SCT10N120; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC - 1030763-SCT2450KEC - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC
1030763-SCT2450KEC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC 1030763-SCT2450KEC
Manufacturer: Rohm Semiconductor Win Source Part Number: 1030763-SCT2450KEC Packaging: Tube/Rail Mounting: Through Hole Technology: SiCFET (Silicon Carbide) Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 900μA Max Gate Charge: 27nC @ 18V Max Input Capacitance: 463pF @ 800V Maximum Gate-Source Voltage: +22V, -6V Maximum Rds On at Id,Vgs: 585 mOhm @ 3A, 18V Alternative Parts (Cross-Reference): APT28M120L; SCT2450KE; SCT10N120; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1030763-SCT2450KEC
Packaging: Tube/Rail
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 18V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 900μA
Max Gate Charge: 27nC @ 18V
Max Input Capacitance: 463pF @ 800V
Maximum Gate-Source Voltage: +22V, -6V
Maximum Rds On at Id,Vgs: 585 mOhm @ 3A, 18V
Alternative Parts (Cross-Reference): APT28M120L; SCT2450KE; SCT10N120;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SCT2450KEC-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SCT2450KEC-ND
Single FETs, MOSFETs SCT2450KEC-ND
N-Channel 1200V 10A (Tc) 85W (Tc) Through Hole TO-247

N-Channel 1200V 10A (Tc) 85W (Tc) Through Hole TO-247

Buy Now Datasheet
Mosfet, N Channel, 1.2Kv, 10A, 0R45, To-247-3; Mosfet Configuration Rohm - 06X0713 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 1.2Kv, 10A, 0R45, To-247-3; Mosfet Configuration Rohm
06X0713
Mosfet, N Channel, 1.2Kv, 10A, 0R45, To-247-3; Mosfet Configuration Rohm 06X0713
MOSFET, N CHANNEL, 1.2KV, 10A, 0R45, TO-247-3; MOSFET Configuration:Single ; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.45ohm; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N CHANNEL, 1.2KV, 10A, 0R45, TO-247-3; MOSFET Configuration:Single; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.45ohm; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SCT2450KEC
MOSFET SCT2450KEC
MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC

MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT2450KEC - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCT2450KEC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCT2450KEC
SICFET N-CH 1200V 10A TO247

SICFET N-CH 1200V 10A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1030763-SCT2450KEC SCT2450KEC-ND 06X0713 SCT2450KEC SCT2450KEC
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2450KEC Single FETs, MOSFETs Mosfet, N Channel, 1.2Kv, 10A, 0R45, To-247-3; Mosfet Configuration Rohm MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 1200 volts
PD 85000 milliwatts
TJ 175 C (347 F)
Package Type TO-247; SOT3; TO-247 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
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