SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).
A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular. As a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCT3060AR | SCT3060AR |
| Product Name | 650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET | 650V Nch 4-pin Package SiC-MOSFET |
| Package Type | TO-247; TO-247-4L | |
| Transistor Grade / Operating Range | Commercial | |
| Polarity | N-Channel | |
| V(BR)DSS | 650 volts |
