ROHM Semiconductor USA, LLC Single FETs, MOSFETs SCT3030ALGC11

Description
N-Channel 650V 70A (Tc) 262W (Tc) Through Hole TO-247N
Request a Quote Datasheet
Description
N-Channel 650V 70A (Tc) 262W (Tc) Through Hole TO-247N
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SCT3030ALGC11-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SCT3030ALGC11-ND
Single FETs, MOSFETs SCT3030ALGC11-ND
N-Channel 650V 70A (Tc) 262W (Tc) Through Hole TO-247N

N-Channel 650V 70A (Tc) 262W (Tc) Through Hole TO-247N

Buy Now Datasheet
Single FETs, MOSFETs - SCT3030ALGC11 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCT3030ALGC11
Single FETs, MOSFETs SCT3030ALGC11
SICFET N-CH 650V 70A TO247N

SICFET N-CH 650V 70A TO247N

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1037938-SCT3030ALGC11 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1037938-SCT3030ALGC11
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1037938-SCT3030ALGC11
Win Source Part Number: 1037938-SCT3030ALGC1 1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Power Dissipation (Max): 262W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Vgs (Max): +22V, -4V Temperature Range - Operating: 175°C (TJ) Alternative Parts (Cross-Reference): STWA88N65M5; FCH041N65F-F085; FCH041N65F-F155; FCH041N65EF-F155; SIHG73N60E-GE3; STW65N65DM2AG; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Base Product Number: SCT3030 Drive Voltage (Max Rds On, Min Rds On): 18V

Win Source Part Number: 1037938-SCT3030ALGC11
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 262W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247N
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Vgs (Max): +22V, -4V
Temperature Range - Operating: 175°C (TJ)
Alternative Parts (Cross-Reference): STWA88N65M5; FCH041N65F-F085; FCH041N65F-F155; FCH041N65EF-F155; SIHG73N60E-GE3; STW65N65DM2AG;
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Base Product Number: SCT3030
Drive Voltage (Max Rds On, Min Rds On): 18V

Buy Now Datasheet
Mosfet, N-Ch, 650V, 70A, To-247N-3; Mosfet Module Configuration Rohm - 05AC9460 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 70A, To-247N-3; Mosfet Module Configuration Rohm
05AC9460
Mosfet, N-Ch, 650V, 70A, To-247N-3; Mosfet Module Configuration Rohm 05AC9460
MOSFET, N-CH, 650V, 70A, TO-247N-3; MOSFET Module Configuration:Single ; Continuous Drain Current Id:70A; Drain Source Voltage Vds:650V; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Gate Source Threshold Voltage Max:5.6V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 70A, TO-247N-3; MOSFET Module Configuration:Single; Continuous Drain Current Id:70A; Drain Source Voltage Vds:650V; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Gate Source Threshold Voltage Max:5.6V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT3030ALGC11 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCT3030ALGC11
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCT3030ALGC11
SICFET N-CH 650V 70A TO247N

SICFET N-CH 650V 70A TO247N

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SCT3030ALGC11-ND SCT3030ALGC11 1037938-SCT3030ALGC11 05AC9460 SCT3030ALGC11
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Mosfet, N-Ch, 650V, 70A, To-247N-3; Mosfet Module Configuration Rohm Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3 TO-3; TO-247 TO-247; TO-247-3
V(BR)DSS 650 volts
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