ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUM003N02 RUM003N02

Manufacturer: Rohm Semiconductor
Win Source Part Number: 095622-RUM003N02
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: VMT3
Dimension: SOT-723
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 300mA (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Input Capacitance: 25pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 1 Ohm @ 300mA, 4V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 300MA VMT3 Product overview: RUM003N02 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 300MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 300MA, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RUM003N02 can be used for catalog matching and distributor lookup.