ROHM Semiconductor USA, LLC 4V Drive Nch MOSFET RSY200N05

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
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Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Request a Quote

Suppliers

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Product
Description
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4V Drive Nch MOSFET - RSY200N05 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
4V Drive Nch MOSFET
RSY200N05
4V Drive Nch MOSFET RSY200N05
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSY200N05 - 726518-RSY200N05 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSY200N05
726518-RSY200N05
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSY200N05 726518-RSY200N05
Manufacturer: Rohm Semiconductor Win Source Part Number: 726518-RSY200N05 Manufacturer Homepage: www.rohm.com Reference case: TO-252 Reference Date Code: 16+ Popularity: Low Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 726518-RSY200N05
Manufacturer Homepage: www.rohm.com
Reference case: TO-252
Reference Date Code: 16+
Popularity: Low
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

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Singapore, Singapore
MOSFET Transistor
285-RSY200N05
MOSFET Transistor 285-RSY200N05
Product overview: RSY200N05 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RSY200N05 can be used for catalog matching and distributor lookup.

Product overview: RSY200N05 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RSY200N05 can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  ROHM Semiconductor USA, LLC Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number RSY200N05 726518-RSY200N05 285-RSY200N05
Product Name 4V Drive Nch MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSY200N05 MOSFET Transistor
Polarity N-Channel
V(BR)DSS 45 volts
IDSS 20000 milliamps
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