ROHM Semiconductor USA, LLC 1.2V Drive Nch MOSFET RUU002N05

Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Request a Quote Datasheet
Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1.2V Drive Nch MOSFET - RUU002N05 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
1.2V Drive Nch MOSFET
RUU002N05
1.2V Drive Nch MOSFET RUU002N05
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUU002N05 - 836177-RUU002N05 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUU002N05
836177-RUU002N05
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUU002N05 836177-RUU002N05
Manufacturer: Rohm Semiconductor Win Source Part Number: 836177-RUU002N05 Categories: Uncategorized Popularity: Low Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 836177-RUU002N05
Categories: Uncategorized
Popularity: Low
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now
Singapore
1.2V MOSFET Transistor
285-RUU002N05
1.2V MOSFET Transistor 285-RUU002N05
1.2V Drive Nch MOSFET Product overview: RUU002N05 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RUU002N05 can be used for catalog matching and distributor lookup.

1.2V Drive Nch MOSFET Product overview: RUU002N05 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RUU002N05 can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  ROHM Semiconductor USA, LLC Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number RUU002N05 836177-RUU002N05 285-RUU002N05
Product Name 1.2V Drive Nch MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUU002N05 1.2V MOSFET Transistor
Polarity N-Channel
V(BR)DSS 50 volts
IDSS 200 milliamps
PD 200 milliwatts
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