N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268
N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268
N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268
SICFET N-CH 1700V 4A TO268 Product overview: SCT2H12NYTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT2H12NYTB can be used for catalog matching and distributor lookup.
SICFET N-CH 1700V 4A TO268
Manufacturer: Rohm Semiconductor
Win Source Part Number: 893887-SCT2H12NYTB
Operating Temperature Range: 175°C (TJ)
Features: N-Channel 1700 V 4A (Tc) 44W (Tc) Surface Mount TO-268
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Package: Reel - TR
Mounting: Surface Mount
Family Name: SCT2H12
Categories: Discrete Semiconductor Products
Case / Package: TO-268
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Balance
Quantity per package: 400
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 14 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SCT2H12NYTBTR, SCT2H12NYTBCT, SCT2H12NYTBDKR
SICFET N-CH 1700V 4A TO268
MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
MOSFET, N-CH, 1.7KV, 4A, TO-268; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):1.15ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCT2H12NYTBTR-ND | 278-SCT2H12NYTB | SCT2H12NYTB | 893887-SCT2H12NYTB | SCT2H12NYTB | SCT2H12NYTB | 18AC7649 |
| Product Name | Single FETs, MOSFETs | 1700V 4A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2H12NYTB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 1.7Kv, 4A, To-268; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | |||||
| Package Type | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | SOT3; TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | TO-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 4.00E-4 kS |
