RTF025N03 is an N-channel 30V, 2.5A small signal MOSFET designed for switching applications, housed in a TUMT3 surface-mount package measuring 2.0mm × 2.1mm. It features a maximum on-resistance of 67mΩ at 4.5V gate drive and 2.5A drain current, a gate-source voltage rating of ±12V, and continuous power dissipation up to 0.8W. The device includes a built-in gate-source protection diode, is RoHS compliant, and operates over a junction temperature range of -55°C to +150°C.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RTF025N03 | RTF025N03 |
| Product Name | 2.5V Drive Nch MOSFET | 2.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 2500 milliamps | 2500 milliamps |
| PD | 800 milliwatts | 800 milliwatts |
