ROHM Semiconductor USA, LLC Single FETs, MOSFETs SCT2160KEC

Description
SICFET N-CH 1200V 22A TO247
  • Single FETs, MOSFETs - SCT2160KEC - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2160KEC - 794017-SCT2160KEC - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SCT2160KEC-ND - DigiKey
    DigiKey
  • Mosfet, N Channel, 1.2Kv, 22A, 0R16, To-247-3; Mosfet Module Configuration Rohm - 06X0711 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT2160KEC - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
SICFET N-CH 1200V 22A TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SCT2160KEC - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCT2160KEC
Single FETs, MOSFETs SCT2160KEC
SICFET N-CH 1200V 22A TO247

SICFET N-CH 1200V 22A TO247

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2160KEC - 794017-SCT2160KEC - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2160KEC
794017-SCT2160KEC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2160KEC 794017-SCT2160KEC
Manufacturer: Rohm Semiconductor Win Source Part Number: 794017-SCT2160KEC Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 175°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Family Name: SCT2160KE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 62nC @ 18V Input Capacitance (Ciss) (Maximum) @ Vds: 1200pF @ 800V Vgs (Maximum): +22V, -6V Power Dissipation (Maximum): 165W (Tc) Rds On (Maximum) @ Id, Vgs: 208 mOhm @ 7A, 18V Alternative Parts (Cross-Reference): SCTWA20N120; SCT20N120; CMF10120D; LSIC1MO120E0120; ECCN: EAR99 Estimated EOL Date: 2031 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 794017-SCT2160KEC
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 175°C (TJ)
Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Family Name: SCT2160KE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 18V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 62nC @ 18V
Input Capacitance (Ciss) (Maximum) @ Vds: 1200pF @ 800V
Vgs (Maximum): +22V, -6V
Power Dissipation (Maximum): 165W (Tc)
Rds On (Maximum) @ Id, Vgs: 208 mOhm @ 7A, 18V
Alternative Parts (Cross-Reference): SCTWA20N120; SCT20N120; CMF10120D; LSIC1MO120E0120;
ECCN: EAR99
Estimated EOL Date: 2031
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
1200V 22A MOSFET Transistor
278-SCT2160KEC
1200V 22A MOSFET Transistor 278-SCT2160KEC
SICFET N-CH 1200V 22A TO247 Product overview: SCT2160KEC from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT2160KEC can be used for catalog matching and distributor lookup.

SICFET N-CH 1200V 22A TO247 Product overview: SCT2160KEC from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT2160KEC can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SCT2160KEC-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SCT2160KEC-ND
Single FETs, MOSFETs SCT2160KEC-ND
N-Channel 1200V 22A (Tc) 165W (Tc) Through Hole TO-247

N-Channel 1200V 22A (Tc) 165W (Tc) Through Hole TO-247

Buy Now Datasheet
Mosfet, N Channel, 1.2Kv, 22A, 0R16, To-247-3; Mosfet Module Configuration Rohm - 06X0711 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 1.2Kv, 22A, 0R16, To-247-3; Mosfet Module Configuration Rohm
06X0711
Mosfet, N Channel, 1.2Kv, 22A, 0R16, To-247-3; Mosfet Module Configuration Rohm 06X0711
MOSFET, N CHANNEL, 1.2KV, 22A, 0R16, TO-247-3; MOSFET Module Configuration:Single ; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CHANNEL, 1.2KV, 22A, 0R16, TO-247-3; MOSFET Module Configuration:Single; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT2160KEC - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCT2160KEC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCT2160KEC
SICFET N-CH 1200V 22A TO247

SICFET N-CH 1200V 22A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SCT2160KEC
MOSFET SCT2160KEC
MOSFET 1200V20A160mOhm Silicon Carbide SiC

MOSFET 1200V20A160mOhm Silicon Carbide SiC

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SCT2160KEC 794017-SCT2160KEC 278-SCT2160KEC SCT2160KEC-ND 06X0711 SCT2160KEC SCT2160KEC
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT2160KEC 1200V 22A MOSFET Transistor Single FETs, MOSFETs Mosfet, N Channel, 1.2Kv, 22A, 0R16, To-247-3; Mosfet Module Configuration Rohm Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts
IDSS 22000 milliamps 22000 milliamps
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