ROHM Semiconductor USA, LLC Single FETs, MOSFETs RT1A045APTCR

Description
P-Channel 12V 4.5A (Ta) 650mW (Ta) Surface Mount 8-TSST
Request a Quote Datasheet
Description
P-Channel 12V 4.5A (Ta) 650mW (Ta) Surface Mount 8-TSST
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - RT1A045APTCRTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RT1A045APTCRTR-ND
Single FETs, MOSFETs RT1A045APTCRTR-ND
P-Channel 12V 4.5A (Ta) 650mW (Ta) Surface Mount 8-TSST

P-Channel 12V 4.5A (Ta) 650mW (Ta) Surface Mount 8-TSST

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RT1A045APTCR - 1092851-RT1A045APTCR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RT1A045APTCR
1092851-RT1A045APTCR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RT1A045APTCR 1092851-RT1A045APTCR
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092851-RT1A045APTCR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 650mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-TSST Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4200pF @ 6V Maximum Gate-Source Voltage: -8V Maximum Rds On at Id,Vgs: 30 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092851-RT1A045APTCR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 650mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-TSST
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 40nC @ 4.5V
Max Input Capacitance: 4200pF @ 6V
Maximum Gate-Source Voltage: -8V
Maximum Rds On at Id,Vgs: 30 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RT1A045APTCR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RT1A045APTCR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RT1A045APTCR
MOSFET P-CH 12V 4.5A 8TSST

MOSFET P-CH 12V 4.5A 8TSST

Supplier's Site
MOSFET P-CH 12V 4.5A TSST8 - 687-RT1A045APTCR - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 12V 4.5A TSST8
687-RT1A045APTCR
MOSFET P-CH 12V 4.5A TSST8 687-RT1A045APTCR
MOSFET P-CH 12V 4.5A TSST8

MOSFET P-CH 12V 4.5A TSST8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 1.5V Drive Pch Si MOSFET

MOSFET 1.5V Drive Pch Si MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number RT1A045APTCRTR-ND 1092851-RT1A045APTCR RT1A045APTCR 687-RT1A045APTCR RT1A045APTCR
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RT1A045APTCR Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P-CH 12V 4.5A TSST8 MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type 8-SMD, Flat Leads SOT3; 8-TSST 8-SMD, Flat Lead
V(BR)DSS 12 volts 12 volts
PD 650 milliwatts 650 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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