ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RT1A045APTCR RT1A045APTCR

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092851-RT1A045APTCR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 650mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-TSST Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4200pF @ 6V Maximum Gate-Source Voltage: -8V Maximum Rds On at Id,Vgs: 30 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092851-RT1A045APTCR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 650mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-TSST Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4200pF @ 6V Maximum Gate-Source Voltage: -8V Maximum Rds On at Id,Vgs: 30 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RT1A045APTCR - 1092851-RT1A045APTCR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RT1A045APTCR
1092851-RT1A045APTCR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RT1A045APTCR 1092851-RT1A045APTCR
Manufacturer: Rohm Semiconductor Win Source Part Number: 1092851-RT1A045APTCR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 650mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-TSST Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4200pF @ 6V Maximum Gate-Source Voltage: -8V Maximum Rds On at Id,Vgs: 30 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092851-RT1A045APTCR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 650mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-TSST
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 40nC @ 4.5V
Max Input Capacitance: 4200pF @ 6V
Maximum Gate-Source Voltage: -8V
Maximum Rds On at Id,Vgs: 30 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - RT1A045APTCRTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RT1A045APTCRTR-ND
Single FETs, MOSFETs RT1A045APTCRTR-ND
P-Channel 12V 4.5A (Ta) 650mW (Ta) Surface Mount 8-TSST

P-Channel 12V 4.5A (Ta) 650mW (Ta) Surface Mount 8-TSST

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 1.5V Drive Pch Si MOSFET

MOSFET 1.5V Drive Pch Si MOSFET

Buy Now Datasheet
MOSFET P-CH 12V 4.5A TSST8 - 687-RT1A045APTCR - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 12V 4.5A TSST8
687-RT1A045APTCR
MOSFET P-CH 12V 4.5A TSST8 687-RT1A045APTCR
MOSFET P-CH 12V 4.5A TSST8

MOSFET P-CH 12V 4.5A TSST8

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RT1A045APTCR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RT1A045APTCR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RT1A045APTCR
MOSFET P-CH 12V 4.5A 8TSST

MOSFET P-CH 12V 4.5A 8TSST

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1092851-RT1A045APTCR RT1A045APTCRTR-ND RT1A045APTCR 687-RT1A045APTCR RT1A045APTCR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RT1A045APTCR Single FETs, MOSFETs MOSFET MOSFET P-CH 12V 4.5A TSST8 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 12 volts 12 volts
PD 650 milliwatts 650 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type SOT3; 8-TSST 8-SMD, Flat Leads 8-SMD, Flat Lead
Unlock Full Specs
to access all available technical data