The RVQ040N05 is an N-channel MOSFET designed for DC/DC converters, housed in the TSMT6 surface-mount package. It has a drain-source voltage rating of 45 V and a continuous drain current of ±4.0 A. The maximum on-resistance is 53 mΩ at a gate-source voltage of 10 V and drain current of 4 A, and 74 mΩ at 4.0 V gate-source voltage. The device includes a built-in gate-source protection diode and is RoHS compliant. Power dissipation is rated at 1.25 W with a junction temperature range of -55 to +150 °C.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RVQ040N05 | RVQ040N05 |
| Product Name | Nch 45V 4A Small Signal MOSFET | 4V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| Package Type | TSMT6 | SOT-457 |
| Transistor Grade / Operating Range | Commercial | |
| V(BR)DSS | 45 volts |
