ROHM Semiconductor GmbH 650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3030AR

Description
SCT3030AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, motor drives, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N). A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
Description
SCT3030AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, motor drives, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N). A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
Datasheet
Datasheet Summary
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The SCT3030AR is a 650 V silicon carbide (SiC) N-channel MOSFET in a TO-247-4L package, designed for high-efficiency power conversion in applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 30 mΩ at 25 °C and a continuous drain current rating of 70 A at 25 °C, reducing to 49 A at 100 °C. The device features a 4-pin configuration that separates the driver and power sources to optimize switching performance. It supports a gate-source voltage range of -4 V to +22 V, with a recommended drive voltage of +18 V. The maximum junction temperature is 175 °C, and thermal resistance from junction to case is 0.44 to 0.57 K/W. The part is RoHS compliant and meets AEC-Q200 qualification standards for automotive use.

Datasheet Summary
Powered by GS/AI

The SCT3030AR is a 650 V silicon carbide (SiC) N-channel MOSFET in a TO-247-4L package, designed for high-efficiency power conversion in applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 30 mΩ at 25 °C and a continuous drain current rating of 70 A at 25 °C, reducing to 49 A at 100 °C. The device features a 4-pin configuration that separates the driver and power sources to optimize switching performance. It supports a gate-source voltage range of -4 V to +22 V, with a recommended drive voltage of +18 V. The maximum junction temperature is 175 °C, and thermal resistance from junction to case is 0.44 to 0.57 K/W. The part is RoHS compliant and meets AEC-Q200 qualification standards for automotive use.

Suppliers

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Supplier Links
650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3030AR - ROHM Semiconductor GmbH
Willich, Germany
650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3030AR
650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3030AR
SCT3030AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, motor drives, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N). A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.

SCT3030AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, motor drives, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).
A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.

Supplier's Site Datasheet
650V Nch 4-pin Package SiC-MOSFET - SCT3030AR - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
650V Nch 4-pin Package SiC-MOSFET
SCT3030AR
650V Nch 4-pin Package SiC-MOSFET SCT3030AR
SCT3030AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular. As a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).

SCT3030AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular. As a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SCT3030AR SCT3030AR
Product Name 650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 650V Nch 4-pin Package SiC-MOSFET
Package Type TO-247; TO-247-4L
Transistor Grade / Operating Range Commercial
Polarity N-Channel
V(BR)DSS 650 volts
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