SICFET N-CH 650V 30A TO247N Product overview: SCT3080ALGC11 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT3080ALGC11 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1091922-SCT3080ALGC1
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Power Dissipation (Max): 134W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247N
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Vgs (Max): +22V, -4V
Temperature Range - Operating: 175°C (TJ)
Alternative Parts (Cross-Reference): SCT3080ALGC11SCT3080
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Base Product Number: SCT3080
Drive Voltage (Max Rds On, Min Rds On): 18V
N-Channel 650V 30A (Tc) 134W (Tc) Through Hole TO-247N
SICFET N-CH 650V 30A TO247N
MOSFET, N-CH, 650V, 30A, TO-247N; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; Power RoHS Compliant: Yes
MOSFET N-Ch 650V 30A Silicon Carbide SiC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SCT3080ALGC11 | 1091922-SCT3080ALGC11 | SCT3080ALGC11-ND | SCT3080ALGC11 | 05AC9464 | SCT3080ALGC11 |
| Product Name | 650V 30A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 30A, To-247N; Transistor Polarity Rohm | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0038 kS | |||||
| PD | 134 milliwatts | |||||
| TJ | 175 C (347 F) |