ROHM Semiconductor USA, LLC Nch 30V 6A Small Signal MOSFET RT1E060XN

Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Datasheet
Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Datasheet

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Nch 30V 6A Small Signal MOSFET - RT1E060XN - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
Nch 30V 6A Small Signal MOSFET
RT1E060XN
Nch 30V 6A Small Signal MOSFET RT1E060XN
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RT1E060XN
Product Name Nch 30V 6A Small Signal MOSFET
Polarity N-Channel
V(BR)DSS 30 volts
IDSS 6000 milliamps
PD 1250 milliwatts
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