The RU1J002YN is an N-channel MOSFET designed for low-voltage switching in portable equipment, featuring a 50V drain-source voltage rating, ±200mA continuous drain current, and a maximum power dissipation of 150mW. It is housed in the SOT-323FL package and supports drive voltages as low as 0.9V. The device includes a built-in gate-source protection diode and has a maximum on-state resistance of 2.2Ω at a gate-source voltage of 4.5V and drain current of 200mA. The junction temperature range is -55°C to +150°C, with a thermal resistance of 833°C/W. The marking code is QJ and it is supplied in tape and reel packaging with a reel size of 180mm and a tape width of 8mm, in units of 3000 pieces.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RU1J002YN | RU1J002YN |
| Product Name | 0.9V Drive Nch MOSFET | 0.9V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 50 volts | 50 volts |
| IDSS | 200 milliamps | 200 milliamps |
| PD | 150 milliwatts | 150 milliwatts |
