The SCT2280KE is an N-channel silicon carbide (SiC) MOSFET designed for high-voltage switching applications such as solar inverters, DC/DC converters, and motor drives. It is packaged in a TO-247N case and has a drain-source voltage rating of 1200 V, a continuous drain current of 14 A at 25°C, and a typical on-resistance of 280 mΩ. The device supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 1.07 to 1.39 °C/W. It features fast switching and reverse recovery, with a body diode continuous forward current of 14 A and a reverse recovery time of 22 ns. The part is RoHS compliant with Pb-free plating.
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCT2280KE | SCT2280KE |
| Product Name | 1200V, 14A, THD, Silicon-carbide (SiC) MOSFET | SiC MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | |
| Transistor Technology / Material | SiC | |
| V(BR)DSS | 1200 volts | |
| IDSS | 14000 milliamps |
