The SCT3060AL is an N-channel MOSFET with a maximum drain-source voltage (V_DSS) of 650V and a continuous drain current (I_D) rating of 39A. It features a low on-resistance of 60mOc, which is measured at a gate-source voltage (V_GS) of 18V. The device is packaged in a TO-247N format, making it suitable for applications requiring robust thermal performance. This MOSFET is designed for various applications, including solar inverters, DC/DC converters, switch mode power supplies, induction heating, and motor drives. It has a maximum power dissipation of 165W and a thermal resistance from junction to case (R_thJC) of 0.91¬8C/W. The device is RoHS compliant and features Pb-free lead plating, ensuring it meets environmental standards. The SCT3060AL also offers fast switching speeds and easy parallel operation, making it a versatile choice for engineers looking for reliable performance in high-voltage applications.
SICFET N-CH 650V 39A TO247N Product overview: SCT3060ALGC11 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 39A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 39A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT3060ALGC11 can be used for catalog matching and distributor lookup.
N-Channel 650V 39A (Tc) 165W (Tc) Through Hole TO-247N
SICFET N-CH 650V 39A TO247N
Manufacturer: Rohm Semiconductor
Category: Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247N
MOSFET, N-CH, 650V, 39A, TO-247N; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; Power RoHS Compliant: Yes
SICFET N-CH 650V 39A TO247N
MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SCT3060ALGC11 | SCT3060ALGC11-ND | SCT3060ALGC11 | 05AC9463 | SCT3060ALGC11 | SCT3060ALGC11 | |
| Product Name | 650V 39A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 39A, To-247N; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0049 kS | ||||||
| PD | 165 milliwatts | 165000 milliwatts | |||||
| TJ | 175 C (347 F) | 175 C (347 F) |
