ROHM Semiconductor USA, LLC Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs SCT3060ALGC11

Description
Manufacturer: Rohm Semiconductor Category: Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N
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Description
Manufacturer: Rohm Semiconductor Category: Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N
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Datasheet
Datasheet Summary
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The SCT3060AL is an N-channel MOSFET with a maximum drain-source voltage (V_DSS) of 650V and a continuous drain current (I_D) rating of 39A. It features a low on-resistance of 60mOc, which is measured at a gate-source voltage (V_GS) of 18V. The device is packaged in a TO-247N format, making it suitable for applications requiring robust thermal performance. This MOSFET is designed for various applications, including solar inverters, DC/DC converters, switch mode power supplies, induction heating, and motor drives. It has a maximum power dissipation of 165W and a thermal resistance from junction to case (R_thJC) of 0.91¬8C/W. The device is RoHS compliant and features Pb-free lead plating, ensuring it meets environmental standards. The SCT3060AL also offers fast switching speeds and easy parallel operation, making it a versatile choice for engineers looking for reliable performance in high-voltage applications.

Datasheet Summary
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The SCT3060AL is an N-channel MOSFET with a maximum drain-source voltage (V_DSS) of 650V and a continuous drain current (I_D) rating of 39A. It features a low on-resistance of 60mOc, which is measured at a gate-source voltage (V_GS) of 18V. The device is packaged in a TO-247N format, making it suitable for applications requiring robust thermal performance. This MOSFET is designed for various applications, including solar inverters, DC/DC converters, switch mode power supplies, induction heating, and motor drives. It has a maximum power dissipation of 165W and a thermal resistance from junction to case (R_thJC) of 0.91¬8C/W. The device is RoHS compliant and features Pb-free lead plating, ensuring it meets environmental standards. The SCT3060AL also offers fast switching speeds and easy parallel operation, making it a versatile choice for engineers looking for reliable performance in high-voltage applications.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Manufacturer: Rohm Semiconductor Category: Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N

Manufacturer: Rohm Semiconductor
Category: Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247N

Buy Now Datasheet
Single FETs, MOSFETs - SCT3060ALGC11 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCT3060ALGC11
Single FETs, MOSFETs SCT3060ALGC11
SICFET N-CH 650V 39A TO247N

SICFET N-CH 650V 39A TO247N

Supplier's Site Datasheet
Singapore
650V 39A MOSFET Transistor
278-SCT3060ALGC11
650V 39A MOSFET Transistor 278-SCT3060ALGC11
SICFET N-CH 650V 39A TO247N Product overview: SCT3060ALGC11 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 39A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 39A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT3060ALGC11 can be used for catalog matching and distributor lookup.

SICFET N-CH 650V 39A TO247N Product overview: SCT3060ALGC11 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 39A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 39A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT3060ALGC11 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SCT3060ALGC11-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SCT3060ALGC11-ND
Single FETs, MOSFETs SCT3060ALGC11-ND
N-Channel 650V 39A (Tc) 165W (Tc) Through Hole TO-247N

N-Channel 650V 39A (Tc) 165W (Tc) Through Hole TO-247N

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS

MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS

Buy Now Datasheet
Mosfet, N-Ch, 650V, 39A, To-247N; Transistor Polarity Rohm - 05AC9463 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 39A, To-247N; Transistor Polarity Rohm
05AC9463
Mosfet, N-Ch, 650V, 39A, To-247N; Transistor Polarity Rohm 05AC9463
MOSFET, N-CH, 650V, 39A, TO-247N; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; Power RoHS Compliant: Yes

MOSFET, N-CH, 650V, 39A, TO-247N; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT3060ALGC11 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCT3060ALGC11
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCT3060ALGC11
SICFET N-CH 650V 39A TO247N

SICFET N-CH 650V 39A TO247N

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SCT3060ALGC11 278-SCT3060ALGC11 SCT3060ALGC11-ND SCT3060ALGC11 05AC9463 SCT3060ALGC11
Product Name Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs Single FETs, MOSFETs 650V 39A MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 650V, 39A, To-247N; Transistor Polarity Rohm Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-247; SOT3 TO-247; TO-247-3 Tube TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 650 volts
IDSS 39000 milliamps 39000 milliamps
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