ROHM Semiconductor USA, LLC 4V Drive Nch MOSFET (Corresponds to AEC-Q101) RSS100N03FRA

RSS100N03FRA is a N-channel power MOSFET with a maximum drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) rating of ¬±10A. It features a low on-resistance of 13.3mOc, making it suitable for efficient switching applications. The device is housed in a small surface mount package (SOP8) and is compliant with RoHS standards, featuring Pb-free lead plating. It is AEC-Q101 qualified, indicating its reliability for automotive applications. The MOSFET has a power dissipation capability of 2.0W and operates within a junction temperature range of -55¬8C to +150¬8C. Its thermal resistance from junction to ambient is specified at 62.5¬8C/W. The device also exhibits low gate charge characteristics, with a total gate charge of 14 to 20 nC, which contributes to its fast switching performance.