RUM001L02 is an N-channel MOSFET designed for low-voltage switching applications, featuring a 20V drain-source voltage rating and a maximum continuous drain current of 100mA. It operates with a 1.2V gate drive and has a maximum on-resistance of 18.0Ω at 1.2V gate-source voltage. The device is packaged in SOT-723 and dissipates up to 150mW. It includes a built-in gate-source protection diode and operates over a junction temperature range of -55°C to +150°C.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 734044-RUM001L02
Manufacturer Homepage: www.rohm.com
Reference case: SOT723
Reference Date Code: 14+
Popularity: Low
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Product overview: RUM001L02 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RUM001L02 can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RUM001L02 | RUM001L02 | 734044-RUM001L02 | 285-RUM001L02 |
| Product Name | 1.2V Drive Nch MOSFET | 1.2V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUM001L02 | MOSFET Transistor |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | ||
| IDSS | 100 milliamps | 100 milliamps | ||
| PD | 150 milliwatts | 150 milliwatts |
