RTF025N03FRA is an N-channel 30V 2.5A MOSFET designed for switching applications, housed in a TUMT3 surface-mount package. It features a maximum on-resistance of 67mΩ at 4.5V gate drive, a continuous drain current of ±2.5A, and a power dissipation limit of 0.8W. The device includes a built-in gate-source protection diode, operates from -55°C to 150°C, and is RoHS compliant and AEC-Q101 qualified.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RTF025N03FRA | RTF025N03FRA |
| Product Name | 2.5V Drive Nch MOSFET (AEC-Q101 Qualified) | 2.5V Drive Nch MOSFET (Corresponds to AEC-Q101) |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 2500 milliamps | 2500 milliamps |
| PD | 800 milliwatts | 800 milliwatts |
