The SCT2160KE is an N-channel silicon carbide (SiC) MOSFET in a TO-247N package, designed for high-voltage switching applications such as solar inverters, DC/DC converters, and motor drives. It has a drain-source voltage rating of 1200 V, a continuous drain current of 22 A at 25°C, and a typical on-resistance of 160 mΩ at 25°C. The device supports a maximum junction temperature of 175°C and has a thermal resistance of 0.70-0.91 °C/W from junction to case. It is RoHS compliant and features fast switching and reverse recovery characteristics. The gate-source voltage range is -6 to 22 V, with a gate-source surge voltage limit of -10 to 26 V for pulses under 300 ns.
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCT2160KE | SCT2160KE |
| Product Name | 1200V, 22A, THD, Silicon-carbide (SiC) MOSFET | SiC MOSFET |
| Package Type | TO-247; TO-247N | TO-247 |
| Transistor Grade / Operating Range | Commercial | |
| Transistor Technology / Material | SiC | |
| V(BR)DSS | 1200 volts | |
| IDSS | 22000 milliamps |
