The RUF025N02 is a 1.5V drive N-channel MOSFET from ROHM Semiconductor GmbH, designed for applications requiring low on-resistance and compact packaging. It features a maximum drain-source voltage (V_DSS) of 20V and a continuous drain current (I_D) rating of ¬±2.5A. The device has a maximum on-resistance (R_DS(on)) of 54mOc, making it suitable for efficient power management in various electronic circuits. This MOSFET includes a built-in gate-source protection diode and is housed in a small surface mount package (TUMT3), which facilitates space-saving designs. It is compliant with RoHS standards and features Pb-free lead plating. The device operates within a junction temperature range of -55¬8C to +150¬8C, ensuring reliability in diverse environmental conditions. Engineers considering this MOSFET for their projects should note its low power dissipation capability of 0.8W and its suitability for applications that require efficient switching performance.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RUF025N02 | RUF025N02 |
| Product Name | 1.5V Drive Nch MOSFET | 1.5V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 20 volts | 20 volts |
| IDSS | 2500 milliamps | 2500 milliamps |
| PD | 800 milliwatts | 800 milliwatts |
