ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSS090P03TB RSS090P03TB

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 027534-RSS090P03TB Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 39nC @ 5V Max Input Capacitance: 4000pF @ 10V Maximum Gate-Source Voltage: 20V Maximum Rds On at Id,Vgs: 14 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 027534-RSS090P03TB Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 39nC @ 5V Max Input Capacitance: 4000pF @ 10V Maximum Gate-Source Voltage: 20V Maximum Rds On at Id,Vgs: 14 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSS090P03TB - 027534-RSS090P03TB - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSS090P03TB
027534-RSS090P03TB
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSS090P03TB 027534-RSS090P03TB
Manufacturer: Rohm Semiconductor Win Source Part Number: 027534-RSS090P03TB Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 39nC @ 5V Max Input Capacitance: 4000pF @ 10V Maximum Gate-Source Voltage: 20V Maximum Rds On at Id,Vgs: 14 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 027534-RSS090P03TB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 39nC @ 5V
Max Input Capacitance: 4000pF @ 10V
Maximum Gate-Source Voltage: 20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RSS090P03TB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RSS090P03TB
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RSS090P03TB
MOSFET P-CH 30V 9A 8SOP

MOSFET P-CH 30V 9A 8SOP

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 027534-RSS090P03TB RSS090P03TB
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RSS090P03TB Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts
PD 2000 milliwatts
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