MOSFET P-CH 20V 200MA VMT3
P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount VMT3
P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount VMT3
P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount VMT3
MOSFET P-CH 20V 200MA VMT3 Product overview: RTM002P02T2L from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 200MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RTM002P02T2L can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 027634-RTM002P02T2L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: VMT3
Dimension: SOT-723
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 50pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
MOSFET P-CH 20V 200MA VMT3
MOSFET, P CHANNEL, 20V, 0.2A, VMT3; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RTM002P02T2L | RTM002P02T2LDKR-ND | 278-RTM002P02T2L | 027634-RTM002P02T2L | RTM002P02T2L | RTM002P02T2L | 28W2067 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 20V 200MA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RTM002P02T2L | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P Channel, 20V, 0.2A, Vmt3; Channel Type Rohm |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 200 milliamps | 200 milliamps | |||||
| PD | 150 milliwatts | 150 milliwatts | 150 milliwatts |