ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - RUS100N02TB RUS100N02TB

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1093094-RUS100N02TB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 24nC @ 4.5V
Max Input Capacitance: 2250pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 12 mOhm @ 10A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient

N-Channel 20V 10A (Ta) 2W (Ta) Surface Mount 8-SOP

N-Channel 20V 10A (Ta) 2W (Ta) Surface Mount 8-SOP

MOSFET N-CH 20V 10A 8SOP Product overview: RUS100N02TB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RUS100N02TB can be used for catalog matching and distributor lookup.