RXH125N03 is an N-channel 30V power MOSFET in an SOP8 surface-mount package designed for switching applications. It has a maximum continuous drain current of 12.5A and a maximum on-resistance of 12.0mΩ at 10V gate Drive. The device supports a pulsed drain current of ±36A, with a power dissipation of 2.0W and a junction temperature range of -55°C to +150°C. It is RoHS compliant and halogen-free, with a thermal resistance of 62.5°C/W on a ceramic board and 89.2°C/W on FR4. Gate charge characteristics include a total gate charge of 12.7nC, and forward body diode voltage of 1.2V at 12.5A.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1244813-RXH125N03
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
4V Drive Nch MOSFET Product overview: RXH125N03 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RXH125N03 can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RXH125N03 | RXH125N03 | 1244813-RXH125N03 | 285-RXH125N03 |
| Product Name | Nch 30V 12.5A Power MOSFET | Nch 30V 12.5A Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RXH125N03 | 4V MOSFET Transistor |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 12500 milliamps | 12500 milliamps | ||
| QG | 12.7 nC | 12.7 nC | ||
| PD | 2000 milliwatts | 2000 milliwatts |
