MOSFET P-CH 12V 2.5A WEMT6
MOSFET P-CH 12V 2.5A WEMT6 Product overview: RW1A025APT2CR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RW1A025APT2CR can be used for catalog matching and distributor lookup.
MOSFET P-CH 12V 2.5A WEMT6
Manufacturer: Rohm Semiconductor
Win Source Part Number: 027661-RW1A025APT2CR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 400mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-WEMT
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 16nC @ 4.5V
Max Input Capacitance: 2000pF @ 6V
Maximum Gate-Source Voltage: -8V
Maximum Rds On at Id,Vgs: 62 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
MOSFET P-CH 12V 2.5A WEMT6
MOSFET, P-CH, -12V, -2.5A, SOT-563T; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
MOSFET P-CH 12V 2.5A WEMT6
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RW1A025APT2CR | 278-RW1A025APT2CR | 846-RW1A025APT2CRTR-ND | 027661-RW1A025APT2CR | RW1A025APT2CR | 10AC8995 | 687-RW1A025APT2CR | RW1A025APT2CR |
| Product Name | Single FETs, MOSFETs | 12V 2.5A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RW1A025APT2CR | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -12V, -2.5A, Sot-563T; Transistor Polarity Rohm | MOSFET P-CH 12V 2.5A WEMT6 | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-CHANNEL | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 12 volts | 12 volts | ||||||
| IDSS | 2500 milliamps | -2500 milliamps | ||||||
| PD | 400 milliwatts | 400 milliwatts | 400 milliwatts | 400 milliwatts |
