ROHM Semiconductor USA, LLC Single FETs, MOSFETs SCT3120ALGC11

SICFET N-CH 650V 21A TO247N

SICFET N-CH 650V 21A TO247N Product overview: SCT3120ALGC11 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT3120ALGC11 can be used for catalog matching and distributor lookup.

N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N

Win Source Part Number: 1091923-SCT3120ALGC11
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Power Dissipation (Max): 103W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247N
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Vgs (Max): +22V, -4V
Temperature Range - Operating: 175°C (TJ)
Alternative Parts (Cross-Reference): SCT3120ALGC11SCT3120AL; SCT3120ALGC11.;
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: Q12567120
Base Product Number: SCT3120
Drive Voltage (Max Rds On, Min Rds On): 18V

MOSFET N-Channel 21A 650V SiC TO-247

MOSFET N-Channel 21A 650V SiC TO-247