ROHM Semiconductor USA, LLC 1.2V Drive Nch MOSFET (Corresponds to AEC-Q101) RUQ050N02FRA

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet

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1.2V Drive Nch MOSFET (Corresponds to AEC-Q101) - RUQ050N02FRA - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
1.2V Drive Nch MOSFET (Corresponds to AEC-Q101)
RUQ050N02FRA
1.2V Drive Nch MOSFET (Corresponds to AEC-Q101) RUQ050N02FRA
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RUQ050N02FRA
Product Name 1.2V Drive Nch MOSFET (Corresponds to AEC-Q101)
Polarity N-Channel
V(BR)DSS 20 volts
IDSS 5000 milliamps
PD 1250 milliwatts
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