N-Channel 1200V 40A (Tc) 262W (Tc) Through Hole TO-247
Manufacturer: Rohm Semiconductor
Win Source Part Number: 794000-SCH2080KEC
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 175°C (TJ)
Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Family Name: SCH2080KE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 18V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 4V @ 4.4mA
Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 18V
Input Capacitance (Ciss) (Maximum) @ Vds: 1850pF @ 800V
Vgs (Maximum): +22V, -6V
Power Dissipation (Maximum): 262W (Tc)
Rds On (Maximum) @ Id, Vgs: 117 mOhm @ 10A, 18V
Alternative Parts (Cross-Reference): CMF20120D; APT25SM120B; CMF10120D; C2M0160120D;
Introduction Date: May 09, 2012
ECCN: EAR99
Estimated EOL Date: 2033
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
MOSFET, N CHANNEL, 1.2KV, 35A, 0R08, TO-247-3; MOSFET Module Configuration:Single
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SICFET N-CH 1200V 40A TO247
| DigiKey | Win Source Electronics | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCH2080KEC-ND | 794000-SCH2080KEC | 04X6731 | 687-SCH2080KEC | SCH2080KEC | SCH2080KEC | SCH2080KEC |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC | Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm | MOSFET N-CH 1200V 40A TO-247 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | |||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-3; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | ||
| PD | 262000 milliwatts | 262000 milliwatts | 262000 milliwatts | ||||
| TJ | 175 C (347 F) | 175 C (347 F) | 175 C (347 F) |