ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC SCH2080KEC

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 794000-SCH2080KEC Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 175°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: SCH2080KE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 18V Input Capacitance (Ciss) (Maximum) @ Vds: 1850pF @ 800V Vgs (Maximum): +22V, -6V Power Dissipation (Maximum): 262W (Tc) Rds On (Maximum) @ Id, Vgs: 117 mOhm @ 10A, 18V Alternative Parts (Cross-Reference): CMF20120D; APT25SM120B; CMF10120D; C2M0160120D; Introduction Date: May 09, 2012 ECCN: EAR99 Estimated EOL Date: 2033 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC - 794000-SCH2080KEC - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SCH2080KEC-ND - DigiKey
    DigiKey
  • Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm - 04X6731 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single FETs, MOSFETs - SCH2080KEC - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFET N-CH 1200V 40A TO-247 - 687-SCH2080KEC - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCH2080KEC - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 794000-SCH2080KEC Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 175°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: SCH2080KE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 18V Input Capacitance (Ciss) (Maximum) @ Vds: 1850pF @ 800V Vgs (Maximum): +22V, -6V Power Dissipation (Maximum): 262W (Tc) Rds On (Maximum) @ Id, Vgs: 117 mOhm @ 10A, 18V Alternative Parts (Cross-Reference): CMF20120D; APT25SM120B; CMF10120D; C2M0160120D; Introduction Date: May 09, 2012 ECCN: EAR99 Estimated EOL Date: 2033 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC - 794000-SCH2080KEC - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC
794000-SCH2080KEC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC 794000-SCH2080KEC
Manufacturer: Rohm Semiconductor Win Source Part Number: 794000-SCH2080KEC Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 175°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: SCH2080KE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 18V Input Capacitance (Ciss) (Maximum) @ Vds: 1850pF @ 800V Vgs (Maximum): +22V, -6V Power Dissipation (Maximum): 262W (Tc) Rds On (Maximum) @ Id, Vgs: 117 mOhm @ 10A, 18V Alternative Parts (Cross-Reference): CMF20120D; APT25SM120B; CMF10120D; C2M0160120D; Introduction Date: May 09, 2012 ECCN: EAR99 Estimated EOL Date: 2033 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 794000-SCH2080KEC
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 175°C (TJ)
Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Family Name: SCH2080KE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 18V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 4V @ 4.4mA
Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 18V
Input Capacitance (Ciss) (Maximum) @ Vds: 1850pF @ 800V
Vgs (Maximum): +22V, -6V
Power Dissipation (Maximum): 262W (Tc)
Rds On (Maximum) @ Id, Vgs: 117 mOhm @ 10A, 18V
Alternative Parts (Cross-Reference): CMF20120D; APT25SM120B; CMF10120D; C2M0160120D;
Introduction Date: May 09, 2012
ECCN: EAR99
Estimated EOL Date: 2033
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SCH2080KEC-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SCH2080KEC-ND
Single FETs, MOSFETs SCH2080KEC-ND
N-Channel 1200V 40A (Tc) 262W (Tc) Through Hole TO-247

N-Channel 1200V 40A (Tc) 262W (Tc) Through Hole TO-247

Buy Now Datasheet
Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm - 04X6731 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm
04X6731
Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm 04X6731
MOSFET, N CHANNEL, 1.2KV, 35A, 0R08, TO-247-3; MOSFET Module Configuration:Single ; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CHANNEL, 1.2KV, 35A, 0R08, TO-247-3; MOSFET Module Configuration:Single; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Single FETs, MOSFETs - SCH2080KEC - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCH2080KEC
Single FETs, MOSFETs SCH2080KEC
SICFET N-CH 1200V 40A TO247

SICFET N-CH 1200V 40A TO247

Supplier's Site Datasheet
MOSFET N-CH 1200V 40A TO-247 - 687-SCH2080KEC - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1200V 40A TO-247
687-SCH2080KEC
MOSFET N-CH 1200V 40A TO-247 687-SCH2080KEC
MOSFET N-CH 1200V 40A TO-247

MOSFET N-CH 1200V 40A TO-247

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCH2080KEC - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCH2080KEC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCH2080KEC
SICFET N-CH 1200V 40A TO247

SICFET N-CH 1200V 40A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SCH2080KEC
MOSFET SCH2080KEC
MOSFET SiC N-Ch MOSFET w/ SBD 1200V

MOSFET SiC N-Ch MOSFET w/ SBD 1200V

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Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company ODG (Origin Data Global) Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 794000-SCH2080KEC SCH2080KEC-ND 04X6731 SCH2080KEC 687-SCH2080KEC SCH2080KEC SCH2080KEC
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC Single FETs, MOSFETs Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm Single FETs, MOSFETs MOSFET N-CH 1200V 40A TO-247 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
PD 262000 milliwatts 262000 milliwatts 262000 milliwatts
TJ 175 C (347 F) 175 C (347 F) 175 C (347 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3 TO-247; TO-247-3
Packing Method Tube; Tube Tube; Tube Tube; Tube
Polarity N-Channel N-Channel N-Channel; N-Channel
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