ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC SCH2080KEC

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 794000-SCH2080KEC Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 175°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: SCH2080KE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 18V Input Capacitance (Ciss) (Maximum) @ Vds: 1850pF @ 800V Vgs (Maximum): +22V, -6V Power Dissipation (Maximum): 262W (Tc) Rds On (Maximum) @ Id, Vgs: 117 mOhm @ 10A, 18V Alternative Parts (Cross-Reference): CMF20120D; APT25SM120B; CMF10120D; C2M0160120D; Introduction Date: May 09, 2012 ECCN: EAR99 Estimated EOL Date: 2033 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC - 794000-SCH2080KEC - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SCH2080KEC-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCH2080KEC - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm - 04X6731 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single FETs, MOSFETs - SCH2080KEC - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFET N-CH 1200V 40A TO-247 - 687-SCH2080KEC - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 794000-SCH2080KEC Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 175°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: SCH2080KE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 18V Input Capacitance (Ciss) (Maximum) @ Vds: 1850pF @ 800V Vgs (Maximum): +22V, -6V Power Dissipation (Maximum): 262W (Tc) Rds On (Maximum) @ Id, Vgs: 117 mOhm @ 10A, 18V Alternative Parts (Cross-Reference): CMF20120D; APT25SM120B; CMF10120D; C2M0160120D; Introduction Date: May 09, 2012 ECCN: EAR99 Estimated EOL Date: 2033 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC - 794000-SCH2080KEC - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC
794000-SCH2080KEC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC 794000-SCH2080KEC
Manufacturer: Rohm Semiconductor Win Source Part Number: 794000-SCH2080KEC Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 175°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: SCH2080KE Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 18V Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 18V Input Capacitance (Ciss) (Maximum) @ Vds: 1850pF @ 800V Vgs (Maximum): +22V, -6V Power Dissipation (Maximum): 262W (Tc) Rds On (Maximum) @ Id, Vgs: 117 mOhm @ 10A, 18V Alternative Parts (Cross-Reference): CMF20120D; APT25SM120B; CMF10120D; C2M0160120D; Introduction Date: May 09, 2012 ECCN: EAR99 Estimated EOL Date: 2033 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 794000-SCH2080KEC
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 175°C (TJ)
Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Family Name: SCH2080KE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 18V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 4V @ 4.4mA
Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 18V
Input Capacitance (Ciss) (Maximum) @ Vds: 1850pF @ 800V
Vgs (Maximum): +22V, -6V
Power Dissipation (Maximum): 262W (Tc)
Rds On (Maximum) @ Id, Vgs: 117 mOhm @ 10A, 18V
Alternative Parts (Cross-Reference): CMF20120D; APT25SM120B; CMF10120D; C2M0160120D;
Introduction Date: May 09, 2012
ECCN: EAR99
Estimated EOL Date: 2033
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SCH2080KEC-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SCH2080KEC-ND
Single FETs, MOSFETs SCH2080KEC-ND
N-Channel 1200V 40A (Tc) 262W (Tc) Through Hole TO-247

N-Channel 1200V 40A (Tc) 262W (Tc) Through Hole TO-247

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCH2080KEC - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCH2080KEC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCH2080KEC
SICFET N-CH 1200V 40A TO247

SICFET N-CH 1200V 40A TO247

Supplier's Site
Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm - 04X6731 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm
04X6731
Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm 04X6731
MOSFET, N CHANNEL, 1.2KV, 35A, 0R08, TO-247-3; MOSFET Module Configuration:Single ; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CHANNEL, 1.2KV, 35A, 0R08, TO-247-3; MOSFET Module Configuration:Single; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Single FETs, MOSFETs - SCH2080KEC - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCH2080KEC
Single FETs, MOSFETs SCH2080KEC
SICFET N-CH 1200V 40A TO247

SICFET N-CH 1200V 40A TO247

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SCH2080KEC
MOSFET SCH2080KEC
MOSFET SiC N-Ch MOSFET w/ SBD 1200V

MOSFET SiC N-Ch MOSFET w/ SBD 1200V

Buy Now Datasheet
MOSFET N-CH 1200V 40A TO-247 - 687-SCH2080KEC - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1200V 40A TO-247
687-SCH2080KEC
MOSFET N-CH 1200V 40A TO-247 687-SCH2080KEC
MOSFET N-CH 1200V 40A TO-247

MOSFET N-CH 1200V 40A TO-247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 794000-SCH2080KEC SCH2080KEC-ND SCH2080KEC 04X6731 SCH2080KEC SCH2080KEC 687-SCH2080KEC
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCH2080KEC Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3; Mosfet Module Configuration Rohm Single FETs, MOSFETs MOSFET MOSFET N-CH 1200V 40A TO-247
PD 262000 milliwatts 262000 milliwatts 262000 milliwatts
TJ 175 C (347 F) 175 C (347 F) 175 C (347 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
Packing Method Tube; Tube Tube; Tube Tube; Tube
Polarity N-Channel N-Channel N-Channel; N-Channel
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