The RU1C001UN is a 1.2V drive N-channel MOSFET from ROHM Semiconductor GmbH, designed for low-voltage applications, making it suitable for portable equipment. It features a maximum drain-source voltage (V_DSS) of 20V and a continuous drain current (I_D) rating of ¬±100mA. The device has a maximum on-resistance (R_DS(on)) of 3.5Oc, which contributes to its efficiency in low-power applications. The MOSFET includes a built-in gate-source protection diode, enhancing its reliability in circuit designs. It is packaged in a SOT-323FL form factor, with a power dissipation capability of 200mW and a wide operating temperature range from -55¬8C to +150¬8C. This component is ideal for engineers looking for a compact and efficient solution for low-current switching applications.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Product overview: RU1C001UN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RU1C001UN can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 748907-RU1C001UN
Manufacturer Homepage: www.rohm.com
Reference case: SOT-323
Reference Date Code: 14+
Popularity: Low
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | RU1C001UN | RU1C001UN | 285-RU1C001UN | 748907-RU1C001UN |
| Product Name | 1.2V Drive Nch MOSFET | 1.2V Drive Nch MOSFET | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RU1C001UN |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | ||
| IDSS | 100 milliamps | 100 milliamps | ||
| PD | 200 milliwatts | 200 milliwatts |
