N-Channel 1200V 24A (Tc) 134W Through Hole TO-247N
Win Source Part Number: 1278201-SCT3105KLGC1
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
Power Dissipation (Max): 134W
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247N
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
Vgs (Max): +22V, -4V
Temperature Range - Operating: 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Base Product Number: SCT3105
Drive Voltage (Max Rds On, Min Rds On): 18V
SICFET N-CH 1200V 24A TO247N
MOSFET Nch 1200V 24A SiC TO-247N
MOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; PowerRoHS Compliant: Yes
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SCT3105KLGC11-ND | 1278201-SCT3105KLGC11 | SCT3105KLGC11 | SCT3105KLGC11 | 81AC5496 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 1.2Kv, 24A, 175Deg C, 134W; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | |||
| Transistor Technology / Material | Silicon Carbide | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-3 |
