ROHM Semiconductor USA, LLC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SCT3060ARC14

Description
Win Source Part Number: 1278196-SCT3060ARC14 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Power Dissipation (Max): 165W Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Vgs (Max): +22V, -4V Temperature Range - Operating: 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: 846-SCT3060ARC14,SCT 3060ARC14 Base Product Number: SCT3060 Drive Voltage (Max Rds On, Min Rds On): 18V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278196-SCT3060ARC14 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SCT3060ARC14 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 846-SCT3060ARC14-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT3060ARC14 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • 650V NCH SIC TRENCH MOSFET IN 4P - 687-SCT3060ARC14 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, N-Ch, 650V, 39A, 175Deg C, 165W Rohs Compliant Rohm - 34AH2696 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1278196-SCT3060ARC14 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Power Dissipation (Max): 165W Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Vgs (Max): +22V, -4V Temperature Range - Operating: 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: 846-SCT3060ARC14,SCT 3060ARC14 Base Product Number: SCT3060 Drive Voltage (Max Rds On, Min Rds On): 18V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278196-SCT3060ARC14 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278196-SCT3060ARC14
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278196-SCT3060ARC14
Win Source Part Number: 1278196-SCT3060ARC14 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Power Dissipation (Max): 165W Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Vgs (Max): +22V, -4V Temperature Range - Operating: 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: 846-SCT3060ARC14,SCT 3060ARC14 Base Product Number: SCT3060 Drive Voltage (Max Rds On, Min Rds On): 18V

Win Source Part Number: 1278196-SCT3060ARC14
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Power Dissipation (Max): 165W
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Vgs (Max): +22V, -4V
Temperature Range - Operating: 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: 846-SCT3060ARC14,SCT3060ARC14
Base Product Number: SCT3060
Drive Voltage (Max Rds On, Min Rds On): 18V

Buy Now Datasheet
Single FETs, MOSFETs - SCT3060ARC14 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCT3060ARC14
Single FETs, MOSFETs SCT3060ARC14
SICFET N-CH 650V 39A TO247-4L

SICFET N-CH 650V 39A TO247-4L

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
650V 39A MOSFET Transistor
278-SCT3060ARC14
650V 39A MOSFET Transistor 278-SCT3060ARC14
SICFET N-CH 650V 39A TO247-4L Product overview: SCT3060ARC14 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 39A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 39A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT3060ARC14 can be used for catalog matching and distributor lookup.

SICFET N-CH 650V 39A TO247-4L Product overview: SCT3060ARC14 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 39A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 39A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT3060ARC14 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 846-SCT3060ARC14-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-SCT3060ARC14-ND
Single FETs, MOSFETs 846-SCT3060ARC14-ND
N-Channel 650V 39A (Tc) 165W Through Hole TO-247-4L

N-Channel 650V 39A (Tc) 165W Through Hole TO-247-4L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT3060ARC14 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCT3060ARC14
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCT3060ARC14
SICFET N-CH 650V 39A TO247-4L

SICFET N-CH 650V 39A TO247-4L

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SCT3060ARC14
MOSFET SCT3060ARC14
MOSFET 650V NCH SIC TRENCH

MOSFET 650V NCH SIC TRENCH

Buy Now Datasheet
650V NCH SIC TRENCH MOSFET IN 4P - 687-SCT3060ARC14 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
650V NCH SIC TRENCH MOSFET IN 4P
687-SCT3060ARC14
650V NCH SIC TRENCH MOSFET IN 4P 687-SCT3060ARC14
650V NCH SIC TRENCH MOSFET IN 4P

650V NCH SIC TRENCH MOSFET IN 4P

Supplier's Site
Mosfet, N-Ch, 650V, 39A, 175Deg C, 165W Rohs Compliant Rohm - 34AH2696 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 39A, 175Deg C, 165W Rohs Compliant Rohm
34AH2696
Mosfet, N-Ch, 650V, 39A, 175Deg C, 165W Rohs Compliant Rohm 34AH2696
MOSFET, N-CH, 650V, 39A, 175DEG C, 165W ROHS COMPLIANT: YES

MOSFET, N-CH, 650V, 39A, 175DEG C, 165W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1278196-SCT3060ARC14 SCT3060ARC14 278-SCT3060ARC14 846-SCT3060ARC14-ND SCT3060ARC14 SCT3060ARC14 687-SCT3060ARC14 34AH2696
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 650V 39A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 650V NCH SIC TRENCH MOSFET IN 4P Mosfet, N-Ch, 650V, 39A, 175Deg C, 165W Rohs Compliant Rohm
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-247; SOT3 TO-247; TO-247-4 Tube TO-247; TO-247-4 TO-247; TO-247-4 TO-3
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide SILICON CARBIDE
V(BR)DSS 650 volts 650 volts
IDSS 39000 milliamps
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