Win Source Part Number: 1278196-SCT3060ARC14
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Power Dissipation (Max): 165W
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Vgs (Max): +22V, -4V
Temperature Range - Operating: 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: 846-SCT3060ARC14,SCT
Base Product Number: SCT3060
Drive Voltage (Max Rds On, Min Rds On): 18V
SICFET N-CH 650V 39A TO247-4L
SICFET N-CH 650V 39A TO247-4L Product overview: SCT3060ARC14 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 39A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 39A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT3060ARC14 can be used for catalog matching and distributor lookup.
N-Channel 650V 39A (Tc) 165W Through Hole TO-247-4L
SICFET N-CH 650V 39A TO247-4L
650V NCH SIC TRENCH MOSFET IN 4P
MOSFET, N-CH, 650V, 39A, 175DEG C, 165W ROHS COMPLIANT: YES
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1278196-SCT3060ARC14 | SCT3060ARC14 | 278-SCT3060ARC14 | 846-SCT3060ARC14-ND | SCT3060ARC14 | SCT3060ARC14 | 687-SCT3060ARC14 | 34AH2696 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 650V 39A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | 650V NCH SIC TRENCH MOSFET IN 4P | Mosfet, N-Ch, 650V, 39A, 175Deg C, 165W Rohs Compliant Rohm |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-4 | Tube | TO-247; TO-247-4 | TO-247; TO-247-4 | TO-3 | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | SILICON CARBIDE | |||||
| V(BR)DSS | 650 volts | 650 volts | ||||||
| IDSS | 39000 milliamps |