Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| -150V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - A IRF5NJ6215 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRF5NJ6215 A... | |
| -150V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TX Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRF5NJ6215 A IRF5NJ6215 with... | |
| -150V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TXV Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRF5NJ6215 A IRF5NJ6215 with... | |
| 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A IRF450 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A... | |
| -100V Single P-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon... | |
| -100V Single P-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard... | |
| -55V Single P-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| -55V Single P-Channel Power MOSFET in a TO-262 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 100V Single N-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 100V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MN package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 100V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ SJ package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 150V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 200 V Single N-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard... | |
| 200V Single N-Channel MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications... | |
| 200V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 30V Single N-Channel StrongIRFET™ Power MOSFET and Schottky Diode in a DirectFET™ MT package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The... | |
| 40V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MT package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for... | |
| 50V Dual N-Channel IR MOSFET™ in a SO-8 package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon... | |
| 60 V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ ME package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are... | |
| 60V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MN package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 60V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MX package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 80V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MN package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| IR MOSFET -40 V in a SO-8 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications... | |
| IR MOSFET -55 V in a D²PAK package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications... |
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