Infineon Technologies AG 30V 90A MOSFET Transistor IRF3709STRLPBF

MOSFET N-CH 30V 90A D2PAK Product overview: IRF3709STRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3709STRLPBF can be used for catalog matching and distributor lookup.

N-Channel 30V 90A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK

Manufacturer: Infineon Technologies
Win Source Part Number: 777013-IRF3709STRLPBF
Series: HEXFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Family Name: IRF3709S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 41nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 2672pF @ 16V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.1W (Ta), 120W (Tc)
Rds On (Maximum) @ Id, Vgs: 9 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): STB55NF03LT4; STB70NFS03L; PHB71NQ03LT; HUF76139S3ST;
Introduction Date: July 01, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited