Infineon Technologies AG FETs - Single - IRF3706LPBF IRF3706LPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1186979-IRF3706LPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 88W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 77A Rds On (Maximum) at Id, Vgs: 8.5mOhm at 15A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 4.5V Gate Source Voltage (Maximum): ±12V Input Capacitance (Ciss) (Maximum) at Vds: 2410pF at 10V
Request a Quote
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1186979-IRF3706LPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 88W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 77A Rds On (Maximum) at Id, Vgs: 8.5mOhm at 15A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 4.5V Gate Source Voltage (Maximum): ±12V Input Capacitance (Ciss) (Maximum) at Vds: 2410pF at 10V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF3706LPBF - 1186979-IRF3706LPBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF3706LPBF
1186979-IRF3706LPBF
FETs - Single - IRF3706LPBF 1186979-IRF3706LPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1186979-IRF3706LPBF Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 88W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 77A Rds On (Maximum) at Id, Vgs: 8.5mOhm at 15A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 4.5V Gate Source Voltage (Maximum): ±12V Input Capacitance (Ciss) (Maximum) at Vds: 2410pF at 10V

Manufacturer: Infineon Technologies
Win Source Part Number: 1186979-IRF3706LPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 88W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 77A
Rds On (Maximum) at Id, Vgs: 8.5mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 35nC at 4.5V
Gate Source Voltage (Maximum): ±12V
Input Capacitance (Ciss) (Maximum) at Vds: 2410pF at 10V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1186979-IRF3706LPBF
Product Name FETs - Single - IRF3706LPBF
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 88000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1689548 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity P-Channel
MOSFET Operating Mode Enhancement
Package Type Dfn2020
View Details
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 94-3316 - Acme Chip Technology Co., Limited
Specs
V(BR)DSS 55 volts
IDSS 2000 milliamps
Package Type TO-261-4, TO-261AA
View Details
P-channel vertical D-MOS intermediate level FET - BSP250,115 - Nexperia B.V.
Specs
Package Type SOT223; SOT223
View Details
7 suppliers
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD810020SCLI - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
3 suppliers