Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2807PBF IRF2807PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 092981-IRF2807PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Family Name: IRF2807 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 82A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 3820pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 43A, 10V Alternative Parts (Cross-Reference): IRF2807; PSMN012-80PS,127; PSMN012-80PS; STP75NF75; Introduction Date: February 02, 2004 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2807PBF - 092981-IRF2807PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRF2807PBF-ND - DigiKey
    DigiKey
  • MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S - 70016948 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • N Channel Mosfet, 75V, 82A To-220Ab; Channel Type Infineon - 63J7221 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF2807PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 66776758 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IRF2807PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 092981-IRF2807PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Family Name: IRF2807 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 82A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 3820pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 43A, 10V Alternative Parts (Cross-Reference): IRF2807; PSMN012-80PS,127; PSMN012-80PS; STP75NF75; Introduction Date: February 02, 2004 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2807PBF - 092981-IRF2807PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2807PBF
092981-IRF2807PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2807PBF 092981-IRF2807PBF
Manufacturer: Infineon Technologies Win Source Part Number: 092981-IRF2807PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Family Name: IRF2807 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 82A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 3820pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 43A, 10V Alternative Parts (Cross-Reference): IRF2807; PSMN012-80PS,127; PSMN012-80PS; STP75NF75; Introduction Date: February 02, 2004 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 092981-IRF2807PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Family Name: IRF2807
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 82A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 3820pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 43A, 10V
Alternative Parts (Cross-Reference): IRF2807; PSMN012-80PS,127; PSMN012-80PS; STP75NF75;
Introduction Date: February 02, 2004
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
75V 82A MOSFET Transistor
278-IRF2807PBF
75V 82A MOSFET Transistor 278-IRF2807PBF
MOSFET N-CH 75V 82A TO220AB Product overview: IRF2807PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 82A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 82A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF2807PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 75V 82A TO220AB Product overview: IRF2807PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 82A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 82A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF2807PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF2807PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF2807PBF-ND
Single FETs, MOSFETs IRF2807PBF-ND
N-Channel 75V 82A (Tc) 230W (Tc) Through Hole TO-220AB

N-Channel 75V 82A (Tc) 230W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S - 70016948 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S
70016948
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S 70016948
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF2807PBF
Triode/MOS Tube/Transistor >> MOSFETs IRF2807PBF
75V 82A 13mΩ@10V,43A 230W 4V@250uA N Channel TO-220AB MOSFETs ROHS

75V 82A 13mΩ@10V,43A 230W 4V@250uA N Channel TO-220AB MOSFETs ROHS

Supplier's Site Datasheet
N Channel Mosfet, 75V, 82A To-220Ab; Channel Type Infineon - 63J7221 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 75V, 82A To-220Ab; Channel Type Infineon
63J7221
N Channel Mosfet, 75V, 82A To-220Ab; Channel Type Infineon 63J7221
N CHANNEL MOSFET, 75V, 82A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:82A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 75V, 82A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:82A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF2807PBF
MOSFET IRF2807PBF
MOSFET MOSFT 75V 82A 13mOhm 106.7nC

MOSFET MOSFT 75V 82A 13mOhm 106.7nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF2807PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF2807PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF2807PBF
MOSFET N-CH 75V 82A TO220AB

MOSFET N-CH 75V 82A TO220AB

Supplier's Site
Transistor - 66776758 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
66776758
Transistor 66776758
N CHANNEL MOSFET, 75V, 82A TO-220AB; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:75V; CONTINUOUS DRAIN CURRENT ID:82A; ON RESISTANCE RDS(ON):0.013OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 75V, 82A TO-220AB; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:75V; CONTINUOUS DRAIN CURRENT ID:82A; ON RESISTANCE RDS(ON):0.013OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IRF2807PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF2807PBF
Single FETs, MOSFETs IRF2807PBF
MOSFET N-CH 75V 82A TO220AB

MOSFET N-CH 75V 82A TO220AB

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Allied Electronics, Inc. LCSC Electronics Technology (HK) Limited Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 092981-IRF2807PBF 278-IRF2807PBF IRF2807PBF-ND 70016948 IRF2807PBF 63J7221 IRF2807PBF IRF2807PBF 66776758 IRF2807PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2807PBF 75V 82A MOSFET Transistor Single FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S Triode/MOS Tube/Transistor >> MOSFETs N Channel Mosfet, 75V, 82A To-220Ab; Channel Type Infineon MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 75 volts 75 volts 75 volts 75 volts 75 volts
PD 230000 milliwatts 200 milliwatts 230000 milliwatts 230000 milliwatts 230000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB Tube TO-220; TO-220-3 TO-220 TO-220 TO-3; TO-220 160 nC @ 10 V TO-220; TO-220-3
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