N-Channel 135V 129A (Tc) 441W (Tc) Through Hole PG-TO220-3
MOSFET N-CH 135V 129A TO220-3 Product overview: IRF135B203 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 135V, 129A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 135V, 129A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF135B203 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 718696-IRF135B203
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 441W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 135V
Id - Continuous Drain Current: 129A
Rds On (Maximum) at Id, Vgs: 8.4mOhm at 77A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 270nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 9700pF at 50V
MOSFET N-CH 135V 129A TO220-3
MOSFET, N-CH, 135V, 129A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:129A; Drain Source Voltage Vds:135V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg
MOSFET N-CH 135V 129A TO220-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF135B203-ND | 278-IRF135B203 | 718696-IRF135B203 | IRF135B203 | 12AC9747 | IRF135B203 | IRF135B203 |
| Product Name | Single FETs, MOSFETs | 135V 129A TO220 MOSFET Transistor | FETs - Single - IRF135B203 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 135V, 129A, To-220Ab; Transistor Polarity Infineon | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | Tube | TO-220; SOT3 | TO-220; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 135 volts | 135 volts | |||||
| Transconductance | 0.2000 kS |
